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2SK3566(STA4,Q,M)

Part No 2SK3566(STA4,Q,M)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 900V 2.5A TO-220SIS
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Series π-MOSIV
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 900V
Current - Continuous Drain (Id) @ 25°C 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs 12nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 470pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 40W (Tc)
Rds On (Maximum) @ Id, Vgs 6.4 Ohm @ 1.5A, 10V
Operating Temperature Range 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-220SIS
Package TO-220-3 Full Pack
Win Source Part Number 763000-2SK3566(STA4,Q,M)
Popularity Medium
Supply and Demand Status Limited
Family Name 2SK3566
Introduction Date April 10, 2003
ECCN EAR99
Country of Origin Malaysia
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian 2SK3566(STA4,Q,M) CAD Model

Description

The Toshiba Semiconductor and Storage 763000-2SK3566(STA4,Q,M) is a MOSFET technology-based electronic component.

  • Technology: π-MOSIV
  • Package: TO-220-3 Full Pack
  • Operating Temperature Range: 150°C (TJ)
  • Current-Continuous Drain @ 25°C: 2.5A (Ta)
  • Family: 2SK3566
  • Drive Voltage: 10V
  • Maximum Rds On: 6.4 Ohm @ 1.5A, 10V
  • Input Capacitance: 470pF @ 25V
  • Vgs(th) (Maximum) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Maximum) @ Vgs: 12nC @ 10V
  • Maximum Power Dissipation: 40W (Tc)
  • Drain Source Voltage: 900V

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8751 $52.5060
140+ $0.7180 $100.5200
220+ $0.6956 $153.0320
300+ $0.6731 $201.9300
385+ $0.6507 $250.5195
515+ $0.5834 $300.4510
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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