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A2T18H410-24SR6

Part No A2T18H410-24SR6
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description IC TRANS RF LDMOS  /  RF Mosfet LDMOS (Dual) 28 V 800 mA 1.81GHz 17.4dB 71W NI-1230-4LS2L
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - RF
Mfr NXP USA Inc.
Package Tape & Reel (TR)
Product Status Obsolete
Transistor Type LDMOS (Dual)
Frequency 1.81GHz
Gain 17.4dB
Voltage - Test 28 V
Current - Test 800 mA
Power - Output 71W
Voltage - Rated 65 V
Package / Case NI-1230-4LS2L
Supplier Device Package NI-1230-4LS2L
Base Product Number A2T18
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Other Names 935323767128
Standard Package 150
Win Source Part Number 1042113-A2T18H410-24SR6
Ultra Librarian 3D Model Ultra Librarian A2T18H410-24SR6 CAD Model

Description

Product Overview: A2T18H410-24SR6

The A2T18H410-24SR6 is a high-performance RF power transistor from NXP Semiconductors, designed to meet the rigorous demands of today's wireless infrastructure. This advanced LDMOS transistor is specifically engineered for use in high-power amplifiers operating across a wide range of frequencies. With its exceptional efficiency, reliability, and thermal performance, the A2T18H410-24SR6 is an ideal choice for applications such as cellular base station transmitters, broadcast transmitters, and industrial, scientific, and medical (ISM) applications.

Key Features

  • Frequency Range: The A2T18H410-24SR6 operates efficiently across a broad frequency spectrum, making it versatile for various RF applications.
  • High Output Power: It is capable of delivering a high output power, which ensures strong signal transmission and reception for reliable communication.
  • High Gain: This transistor offers high gain levels, which translates to better signal amplification and overall performance of the RF system.
  • Efficiency: With its advanced LDMOS technology, the A2T18H410-24SR6 achieves high efficiency, reducing power consumption and heat generation.
  • Thermal Performance: The product is designed with an excellent thermal management system, ensuring stable operation even under high-temperature conditions.
  • Ruggedness: Durability is a hallmark of this transistor, which can withstand high voltage standing wave ratios (VSWR) without performance degradation.

Applications

The versatility and robustness of the A2T18H410-24SR6 make it suitable for a wide range of applications, including but not limited to:

  • Cellular base station transmitters for various communication standards
  • Broadcast transmitters for radio and television
  • ISM band applications
  • High-power RF test equipment
  • Professional and commercial RF amplifiers

Quality and Support

NXP Semiconductors is committed to delivering high-quality products and provides comprehensive technical support for the A2T18H410-24SR6. Customers can access detailed datasheets, application notes, and design resources to facilitate product integration and maximize performance.

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