STW15N80K5 - N-Channel MOSFET from STMicroelectronics

The STW15N80K5 is a high-performance, N-channel Power MOSFET designed and manufactured by STMicroelectronics. This MOSFET is part of the MDmesh™ K5 series which is well-known for its high efficiency in various power conversion applications. It is particularly suited for high efficiency switch mode power supplies, power factor correction circuits, and electronic lamp ballasts, among other uses.

Key Features

• High Voltage Capability: With a drain-source voltage (V<sub>DS) of 800V, this MOSFET can handle high voltage operations, making it ideal for applications that require robust power handling capabilities.
• Low On-Resistance: The STW15N80K5 boasts an extremely low on-resistance (R<sub>DS(on)) of 0.28 ohms, which translates to reduced conduction losses and improved overall efficiency.
• Reduced Gate Charge: The MOSFET features a low gate charge (Q<sub>g), which minimizes switching losses and enables faster switching operations.
• High dv/dt Capability: This device is capable of withstanding a high voltage change rate (dv/dt), ensuring reliability under fast-switching conditions and transient voltage spikes.
• 100% Avalanche Tested: Each unit is tested for avalanche ruggedness, ensuring its capability to handle tough conditions without failure.
• Enhanced Body Diode: The MOSFET comes with an improved intrinsic body diode with low reverse recovery time (t<sub>rr), which is beneficial for applications that require high switching frequencies.

Applications

The STW15N80K5 is versatile and can be used in a variety of applications, including:

• Switch Mode Power Supplies (SMPS)
• Power Factor Correction (PFC) circuits
• Uninterruptible Power Supplies (UPS)
• LED Lighting applications
• High-frequency DC/DC converters

With its robust design and advanced technology, the STW15N80K5 is a reliable component for designers and engineers looking to enhance the performance and efficiency of their power conversion systems. STMicroelectronics' commitment to quality ensures that this MOSFET meets the highest standards of performance and reliability.