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F25NM50N

Part No F25NM50N
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 22A TO220FP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 84nC @ 10V
Max Input Capacitance 2565pF @ 25V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 40W (Tc)
Maximum Rds On at Id,Vgs 140 mOhm @ 11A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-3 Full Pack
Win Source Part Number 066699-F25NM50N
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian F25NM50N CAD Model

Description

STMicroelectronics F25NM50N N-Channel MOSFET

The F25NM50N is a high-performance N-Channel MOSFET produced by STMicroelectronics, a leader in semiconductor solutions. This power MOSFET is designed to handle high current and voltage with efficiency, making it an ideal choice for a wide range of applications including power supplies, converters, motor drives, and other high-power switching applications.

With a 250V drain-source voltage (V<sub>DS) and a 22A continuous drain current (I<sub>D), the F25NM50N is capable of managing challenging electrical environments. Its low on-resistance (R<sub>DS(on)) of typically 0.085 Ω at 10V enhances its efficiency, reducing conduction losses and improving overall performance.

The device features STripFET™ II technology, which allows for improved current handling and thermal performance compared to traditional MOSFETs. This technology also contributes to the F25NM50N's robustness and reliability under high switching frequencies, making it a suitable component for advanced power electronic designs.

The F25NM50N comes in a TO-220 package, which is known for its ease of installation and solid thermal and electrical characteristics. This packaging ensures that the MOSFET can be easily integrated into a variety of circuit designs while providing excellent heat dissipation, a critical factor for maintaining stability and longevity in power applications.

Safety and protection features are paramount in power components, and the F25NM50N doesn't disappoint. It includes built-in avalanche ruggedness, which means it can withstand high energy pulses in the avalanche and commutation modes. This characteristic is essential for applications that may experience unexpected voltage spikes, as it helps to prevent device failure and extend the product's lifespan.

In summary, the STMicroelectronics F25NM50N is a robust and efficient solution for designers looking to optimize their high-power systems. With its advanced technology, high current handling, low on-resistance, and reliable packaging, it stands out as a superior choice for a wide array of industrial and commercial electronic designs.

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