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STP11N65M2

Part No STP11N65M2
Manufacturer STMicroelectronics
Catalog FETs - Single
Description Extremely low gate charge | MOSFET N-CH 650V 7A TO-220AB
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 650V
Id - Continuous Drain Current 7A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 670mOhm at 3.5A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 12.5nC at 10V
Gate Source Voltage (Maximum) ±25V
Input Capacitance (Ciss) (Maximum) at Vds 410pF at 100V
Power Dissipation (Maximum) 85W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 720604-STP11N65M2
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STP11N65M2 CAD Model

Description

The STP11N65M2 is a state-of-the-art power MOSFET designed and manufactured by STMicroelectronics, a leader in semiconductor solutions. This device is part of the MDmesh™ M2 series, which is renowned for its excellent energy efficiency and high power density. The STP11N65M2 is specifically engineered to address the demanding requirements of high-performance power conversion applications.

Key Features

  • Voltage Rating: The STP11N65M2 has a drain-source voltage (V<sub>DS) of 650V, making it suitable for a wide range of applications that require high voltage capabilities.
  • Low On-Resistance: With an on-resistance (R<sub>DS(on)) of just 0.47 Ω, this MOSFET ensures minimal conduction losses, enhancing overall system efficiency.
  • High Current Capacity: The device can handle a continuous drain current (I<sub>D) of up to 11A, providing ample current for demanding power applications.
  • Reduced Gate Charge: The MOSFET features a low gate charge (Q<sub>g), which translates to reduced switching losses and improved performance in high-frequency applications.
  • 100% Avalanche Tested: Each unit is rigorously tested for avalanche ruggedness, ensuring reliability and robustness under stress conditions.
  • Enhanced Body Diode: The fast recovery body diode is designed to handle high-speed switching and reduce reverse recovery losses.

Applications

The STP11N65M2 is ideal for a variety of power applications, including:

  • Switch Mode Power Supplies (SMPS)
  • LED Lighting
  • High-efficiency DC-DC converters
  • Motor Control Systems
  • Power Factor Correction (PFC) circuits

Package and Quality

The MOSFET is housed in a TO-220 package, which is widely used for its thermal and mechanical robustness. Additionally, STMicroelectronics ensures that the STP11N65M2 meets the highest quality standards, providing designers with a reliable component for their power management solutions.

Overall, the STP11N65M2 from STMicroelectronics is an excellent choice for engineers looking to improve the efficiency, reliability, and performance of their power systems. Its advanced features and robust design make it a versatile component in a wide array of electronic products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.2934 $58.2030
110+ $1.0614 $116.7540
170+ $1.0281 $174.7770
235+ $0.9949 $233.8015
305+ $0.9618 $293.3490
405+ $0.8623 $349.2315
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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