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Same model may have multiple batches, images only for reference.
IRF3711Z Real Image
Same model may have multiple batches, images only for reference.

IRF3711Z

Part No IRF3711Z
Manufacturer Infineon Technologies
Catalog FETs - Single
Description HEXFET Power MOSFET | MOSFET N-CH 20V 92A TO-220AB
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 20V
Id - Continuous Drain Current 92A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 6mOhm at 15A, 10V
Gate Source Voltage(th) (Maximum) at Id 2.45V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 24nC at 4.5V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 2150pF at 10V
Power Dissipation (Maximum) 79W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-220AB
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1186997-IRF3711Z
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF3711Z CAD Model

Description

The Infineon Technologies IRF3711Z is a high-performance N-channel MOSFET transistor designed for use in a variety of applications, including power supplies, motor control, and lighting systems.

  • Maximum drain-source breakdown voltage: 20V
  • Continuous drain current: 92A
  • Low on-resistance: 6mOhm @ 15A and 10V
  • Packaged in a TO-220AB package
  • Rated for operation in temperatures ranging from -55°C to 175°C
  • Medium popularity
  • Limited supply and demand status
  • A reliable and cost-effective choice for your next project

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Pricing & Ordering

Quantity Unit Price Ext. Price
180+ $0.3234 $58.2120
435+ $0.2657 $115.5795
675+ $0.2576 $173.8800
930+ $0.2495 $232.0350
1,200+ $0.2414 $289.6800
1,605+ $0.2160 $346.6800
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MOQ: 180 pcs
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