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STP110N7F6

Part No STP110N7F6
Manufacturer STMicroelectronics
Catalog FETs - Single
Description MOSFET N-CHANNEL 68V 110A TO220
Sample
Rohs State rohs
ECAD Module
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Manufacturer STMicroelectronics
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 68V
Current - Continuous Drain (Id) at 25°C 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 6.5mOhm at 55A, 10V
Vgs(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 100nC at 10V
Maximum Vgs ±20V
Input Capacitance (Ciss) (Maximum) at Vds 5850pF at 25V
Power Dissipation (Maximum) 176W (Tc)
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-220
Manufacturer Package TO-220-3
Part Number Series STP110
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Popularity Low
Supply and Demand Status Limited
Win Source Part Number 811597-STP110N7F6
Ultra Librarian 3D Model Ultra Librarian STP110N7F6 CAD Model

Description

STP110N7F6 - High-Performance Power MOSFET by STMicroelectronics

The STP110N7F6 is a state-of-the-art power MOSFET brought to you by STMicroelectronics, a leader in semiconductor solutions. Designed to tackle a wide range of applications, this MOSFET is a perfect choice for high efficiency and power density requirements. The STP110N7F6 is part of STMicroelectronics' STripFET F6 series, which is renowned for its low on-state resistance and minimal gate charge.

Key Features

  • Low Threshold Drive: The device requires a low gate drive voltage, which makes it suitable for low voltage applications and ensures compatibility with modern microcontrollers and drivers.
  • High Current Capability: With a continuous drain current of up to 80A, the STP110N7F6 can handle high current loads, making it ideal for power-intensive applications.
  • Low On-Resistance: The MOSFET features an exceptionally low on-state resistance (RDS(on)) of just 6.7mΩ max, which translates to reduced power losses and improved efficiency in your circuit designs.
  • 100% Avalanche Tested: Ensuring reliability and durability, this MOSFET is guaranteed to withstand harsh conditions, having been rigorously tested for avalanche breakdown resilience.

Applications

The versatility of the STP110N7F6 makes it suitable for a broad range of applications, including but not limited to:

  • Switch Mode Power Supplies (SMPS)
  • DC-DC Converters
  • Motor Control Circuits
  • Automotive Applications
  • Power Management Solutions

Technical Specifications

Here are some of the technical specifications that make the STP110N7F6 a robust choice:

  • Drain-source Voltage (VDS): 68V
  • Continuous Drain Current (ID): 80A
  • Power Dissipation (PD): 180W
  • Operating Temperature Range: -55°C to 175°C

The STP110N7F6 is housed in a TO-220 package, which is widely used and easily integrated into various circuit designs. With its combination of high performance, reliability, and efficiency, the STP110N7F6 is a superior choice for designers looking to enhance their power management systems.

Conclusion

STMicroelectronics' STP110N7F6 is more than just a power MOSFET; it is a testament to the company's commitment to providing high-quality, innovative semiconductor products. Whether you are developing a power supply, an inverter, or any other application that demands high-efficiency power conversion, the STP110N7F6 is an excellent component that will help you achieve your design goals.

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.4385 $50.4275
280+ $0.3598 $100.7440
435+ $0.3485 $151.5975
595+ $0.3373 $200.6935
770+ $0.3261 $251.0970
1,030+ $0.2923 $301.0690
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 40,000 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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