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STHU32N65DM6AG

Part No STHU32N65DM6AG
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description AUTOMOTIVE-GRADE N-CHANNEL 650 V / N-Channel 650 V 37A (Tc) 320W (Tc) Surface Mount HU3PAK
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series Automotive, AEC-Q101
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 97mOhm @ 18.5A, 10V
Vgs(th) (Max) @ Id 4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 52.6 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 2211 pF @ 100 V
Power Dissipation (Max) 320W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package HU3PAK
Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 497-STHU32N65DM6AGTR,497-STHU32N65DM6AGCT,497-STHU32N65DM6AGDKR
Standard Package 600
Win Source Part Number 1036420-STHU32N65DM6AG
Ultra Librarian 3D Model Ultra Librarian STHU32N65DM6AG CAD Model

Description

STHU32N65DM6AG - Power MOSFET from STMicroelectronics

The STHU32N65DM6AG is a high-performance power MOSFET manufactured by STMicroelectronics, designed to meet the demanding requirements of modern electronic applications. This device is part of STMicroelectronics' MDmesh™ DM6 series, which features advanced technology for extremely low on-resistance and high dv/dt capability.

With a voltage rating of 650V, the STHU32N65DM6AG is well-suited for high-voltage applications, ensuring robust performance even under stressful conditions. Its maximum continuous drain current is rated at 22A, making it capable of handling significant power without overheating, thanks to its excellent thermal characteristics.

The STHU32N65DM6AG boasts an ultra-low gate charge (Qg), which translates into reduced switching losses and improved overall efficiency. This feature is particularly beneficial in applications such as switch-mode power supplies, lighting, welding, and solar inverters, where energy efficiency is paramount.

This MOSFET's package is the HU3PAK, which provides a compact footprint while allowing for good heat dissipation. The package is designed to be robust and to ensure a low thermal resistance between the junction and the case, further aiding in maintaining a low operating temperature.

One of the standout features of the STHU32N65DM6AG is its fast body diode, which is optimized for minimal reverse recovery time (trr) and reverse recovery charge (Qrr). This characteristic is essential for high-frequency applications, as it helps to minimize losses during the diode's commutation phase.

STMicroelectronics has also integrated Zener-protected gate technology into this MOSFET, which enhances its robustness against electrostatic discharge (ESD) and makes it less vulnerable to gate oxide stress under abnormal operating conditions.

In conclusion, the STHU32N65DM6AG is a state-of-the-art power MOSFET that offers a combination of high efficiency, reliability, and performance. Its advanced features make it an excellent choice for designers looking to improve the power management and efficiency of their high-voltage systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $12.1264 $60.6320
9+ $11.3589 $102.2301
14+ $10.9752 $153.6528
20+ $10.2077 $204.1540
26+ $9.8240 $255.4240
32+ $9.4402 $302.0864
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 150 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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