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Same model may have multiple batches, images only for reference.
SI8461DB-T2-E1 Vishay
Same model may have multiple batches, images only for reference.

SI8461DB-T2-E1

Part No SI8461DB-T2-E1
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V MICROFOOT
Datasheet
SI8461DB-T2-E1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 24nC @ 8V
Max Input Capacitance 610pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 780mW (Ta), 1.8W (Tc)
Maximum Rds On at Id,Vgs 100 mOhm @ 1.5A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 4-Microfoot
Dimension 4-XFBGA, CSPBGA
Win Source Part Number 100385-SI8461DB-T2-E1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI8461DB-T2-E1 CAD Model

Description

The Vishay MOSFET is a P-channel polarity component with a power dissipation of 780mW (Ta), 1.8W (Tc). Vishay

  • Drive Voltage: 1.5V and 4.5V
  • Maximum Gate Charge: 24nC @ 8V
  • Maximum Rds On @ Id, Vgs: 100 mOhm @ 1.5A, 4.5V
  • Drain-Source Breakdown Voltage: 20V
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Input Capacitance: 610pF @ 10V
  • Maximum Gate-Source Voltage: ±8V
  • RoHS Compliant: Yes
  • Popularity Status: Medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.3347 $58.5725
425+ $0.2747 $116.7475
655+ $0.2661 $174.2955
900+ $0.2576 $231.8400
1,165+ $0.2489 $289.9685
1,555+ $0.2231 $346.9205
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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