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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr STMicroelectronics
Series HB2
Package Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 72 A
Current - Collector Pulsed (Icm) 120 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 40A
Power - Max 227 W
Switching Energy 410µJ (off)
Input Type Standard
Gate Charge 153 nC
Td (on/off) @ 25°C -/125ns
Test Condition 400V, 40A, 4.7Ohm, 15V
Reverse Recovery Time (trr) 140 ns
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247 Long Leads
Base Product Number STGWA40
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 497-19059
Standard Package 30
Win Source Part Number 1025002-STGWA40HP65FB2
Ultra Librarian 3D Model Ultra Librarian STGWA40HP65FB2 CAD Model

Description

STGWA40HP65FB2 - STMicroelectronics

The STGWA40HP65FB2 is a high-performance, 650 V, 40 A trench gate field-stop IGBT developed by STMicroelectronics. This cutting-edge semiconductor device is designed to offer a blend of low on-state voltage drop (Vce(sat)) and low switching losses, making it an ideal choice for a variety of power applications. With its advanced technology, it ensures efficiency, reliability, and thermal performance that are critical for high-power systems.

Constructed using the latest generation trench gate field-stop structure, the STGWA40HP65FB2 minimizes conduction losses while maintaining superior switching performance. This is particularly beneficial for applications that require both high efficiency and fast switching, such as solar inverters, uninterruptible power supplies (UPS), motor drives, and welding equipment.

The device is housed in a TO-247 long leads package, which not only provides robust mechanical protection but also enhances thermal dissipation. This package allows the STGWA40HP65FB2 to operate at high junction temperatures, ensuring stability and longevity even under demanding conditions.

Key features of the STGWA40HP65FB2 include:

  • Maximum collector-emitter voltage (Vce) of 650 V
  • Continuous collector current (Ic) of 40 A at 25°C
  • Low on-state voltage drop (Vce(sat)) of 1.55 V (typ.) at 25°C
  • High-speed switching with low tail current
  • Co-packaged with a soft and fast recovery anti-parallel diode
  • High frequency operation up to 30 kHz

The STGWA40HP65FB2 also exhibits a positive Vce(sat) temperature coefficient, which simplifies the design of parallel configurations. Its tight parameter distribution and its diode's optimized recovery characteristics ensure that the device performs consistently and predictably, which is crucial for designing reliable high-performance power systems.

STMicroelectronics' commitment to quality and innovation is reflected in the STGWA40HP65FB2, making it a top choice for designers who demand the best in terms of efficiency, thermal management, and electrical performance. Whether you're developing energy-saving solutions or robust industrial systems, this IGBT can help you achieve your design goals with confidence.

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $6.4031 $51.2248
20+ $5.2539 $105.0780
30+ $5.0897 $152.6910
41+ $4.9255 $201.9455
53+ $4.7613 $252.3489
71+ $4.2688 $303.0848
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 225 pieces
MOQ: 8 pcs
Order Increment : 1 pieza
*Need More Quantity? *Request a Bulk Quantity Quotation?

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