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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr STMicroelectronics
Series HB2
Package Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 40 A
Current - Collector Pulsed (Icm) 60 A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 20A
Power - Max 147 W
Switching Energy 214µJ (off)
Input Type Standard
Gate Charge 56 nC
Td (on/off) @ 25°C -/78.8ns
Test Condition 400V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr) 140 ns
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247 Long Leads
Base Product Number STGWA20
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 497-STGWA20HP65FB2
Standard Package 30
Win Source Part Number 1015255-STGWA20HP65FB2
Ultra Librarian 3D Model Ultra Librarian STGWA20HP65FB2 CAD Model

Description

STGWA20HP65FB2 - High-Efficiency IGBT from STMicroelectronics

The STGWA20HP65FB2 is a state-of-the-art insulated gate bipolar transistor (IGBT) produced by STMicroelectronics, a leader in semiconductor solutions. This high-performance IGBT is designed to meet the demanding requirements of modern power electronic applications, offering a perfect blend of efficiency, reliability, and thermal performance.

With a maximum collector-emitter voltage of 650V and a continuous collector current rating of 40A at 25°C, the STGWA20HP65FB2 is tailored for high-voltage and high-current applications. Its robustness is further enhanced by the device's high short-circuit withstand time, making it suitable for tough industrial environments.

The STGWA20HP65FB2 features STMicroelectronics' advanced trench gate field-stop technology, which significantly reduces on-state voltage drop (V<sub>CE(sat)) and minimizes switching losses. This technology allows for higher efficiency in applications such as motor drives, power inverters, and power factor correction circuits. The device is also characterized by a positive temperature coefficient on V<sub>CE(sat), which simplifies paralleling IGBTs when higher current handling is required.

Another remarkable attribute of the STGWA20HP65FB2 is its co-packaged, ultra-fast and soft recovery anti-parallel diode. The diode is optimized for minimal reverse recovery time (t<sub>rr), which is essential for reducing electromagnetic interference (EMI) and improving the overall efficiency of the system.

The IGBT comes in a through-hole TO-247 long leads package, which is known for excellent thermal performance and ease of mounting onto heat sinks. This package is widely accepted in the industry and is compatible with a broad range of PCB layouts.

STMicroelectronics has also taken steps to ensure the STGWA20HP65FB2 meets environmental standards. The device is compliant with RoHS and halogen-free, reflecting STMicroelectronics' commitment to environmental sustainability.

In summary, the STGWA20HP65FB2 is a high-power, high-efficiency IGBT that is ideal for a wide array of power applications. Its cutting-edge technology and robust design make it a dependable choice for engineers looking to optimize their power systems for performance and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.5004 $52.5140
85+ $1.2311 $104.6435
130+ $1.1927 $155.0510
175+ $1.1542 $201.9850
225+ $1.1157 $251.0325
300+ $1.0003 $300.0900
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 600 pieces
MOQ: 35 pcs
Order Increment : 1 piece
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