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NGTB45N60S1WG

Part No NGTB45N60S1WG
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description IGBT 45A 600V TO-247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr ON Semiconductor
Package Tube
Product Status Obsolete
IGBT Type Trench
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 90 A
Current - Collector Pulsed (Icm) 180 A
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 45A
Power - Max 300 W
Switching Energy 1.25mJ (on), 530µJ (off)
Input Type Standard
Gate Charge 125 nC
Td (on/off) @ 25°C 72ns/132ns
Test Condition 400V, 45A, 10Ohm, 15V
Reverse Recovery Time (trr) 70 ns
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247-3
Base Product Number NGTB45
Standard Package 30 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 887243-NGTB45N60S1WG
Ultra Librarian 3D Model Ultra Librarian NGTB45N60S1WG CAD Model

Description

The NGTB45N60S1WG is a high-performance insulated gate bipolar transistor (IGBT) developed by ON Semiconductor, a leading provider in the semiconductor industry. This IGBT is designed for a wide range of power electronics applications, offering a perfect blend of high efficiency, fast switching, and robust thermal performance.

Key Features

  • High Current Capability: With a continuous collector current (Ic) of 45A, the NGTB45N60S1WG can handle significant power levels, making it suitable for demanding applications.
  • High Voltage Rating: This IGBT boasts a collector-emitter voltage (Vce) of 600V, which provides a wide safety margin for various electrical applications, from industrial motor drives to renewable energy inverters.
  • Fast Switching Speed: The device is optimized for fast switching, reducing switching losses, and improving overall efficiency in high-frequency applications.
  • Low Saturation Voltage: It features a low Vce(sat), which minimizes conduction losses and enhances performance, especially in applications where the IGBT is in the on-state for extended periods.
  • Co-Packaged Free Wheeling Diode: The inclusion of a soft recovery diode with low reverse recovery time (trr) helps to reduce electromagnetic interference (EMI) and improve the efficiency of the switching circuit.

Applications

The NGTB45N60S1WG is versatile and can be used in various high-power applications, such as:

  • AC/DC converters
  • Uninterruptible Power Supplies (UPS)
  • Motor drives
  • Power inverters for renewable energy sources like solar panels and wind turbines
  • Induction heating and welding systems

Reliability and Quality

ON Semiconductor is known for its commitment to quality and reliability. The NGTB45N60S1WG IGBT is built using state-of-the-art manufacturing processes, ensuring high durability and performance consistency. It is designed to meet the rigorous demands of industrial and commercial applications, providing a reliable solution for power management challenges.

Environmental Considerations

Adhering to environmental standards, the NGTB45N60S1WG is RoHS compliant, minimizing the use of hazardous substances in electronic equipment and promoting sustainability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.7648 $61.7680
80+ $1.4484 $115.8720
125+ $1.4033 $175.4125
175+ $1.3583 $237.7025
220+ $1.3132 $288.9040
295+ $1.1769 $347.1855
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 27,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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