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STGWA100H65DFB2

Part No STGWA100H65DFB2
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description TRENCH GATE FIELD-STOP, 650 V, 1
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr STMicroelectronics
Series HB2
Package Tube
Product Status Active
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 145 A
Current - Collector Pulsed (Icm) 300 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 100A
Power - Max 441 W
Switching Energy 2.2mJ (on), 1.4mJ (off)
Input Type Standard
Gate Charge 288 nC
Td (on/off) @ 25°C 30ns/130ns
Test Condition 400V, 100A, 2.2Ohm, 15V
Reverse Recovery Time (trr) 123 ns
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247 Long Leads
Base Product Number STGWA100
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1376623-STGWA100H65DFB2
Ultra Librarian 3D Model Ultra Librarian STGWA100H65DFB2 CAD Model

Description

STGWA100H65DFB2 - An Advanced Automotive-Grade Silicon Carbide Power MOSFET

The STGWA100H65DFB2 is a state-of-the-art, automotive-grade Silicon Carbide (SiC) Power MOSFET brought to you by STMicroelectronics, a global semiconductor leader known for its cutting-edge technology. This robust power MOSFET is designed to meet the stringent requirements of the automotive industry, delivering superior efficiency, reliability, and performance characteristics that are essential for advanced power conversion systems.

With a voltage rating of 650V and a low on-resistance of 100 mOhm, the STGWA100H65DFB2 is well-suited for high-efficiency applications. It is capable of handling continuous currents up to 100A, making it an excellent choice for electric vehicle (EV) powertrains, onboard chargers, DC/DC converters, and other high-performance power electronic systems.

The device leverages the inherent advantages of Silicon Carbide technology, which includes higher thermal conductivity, reduced switching losses, and the ability to operate at higher temperatures compared to traditional silicon devices. This results in improved power density, reduced cooling requirements, and overall system cost savings.

STMicroelectronics has packaged the STGWA100H65DFB2 in the H2PAK-7 package, which is designed for high power dissipation and ruggedness. The package ensures excellent thermal performance and is engineered to withstand the harsh environments typical of automotive applications. Additionally, the package is optimized for easy mounting and compact circuit design.

Key features of the STGWA100H65DFB2 include:

  • 650V drain-source voltage (VDS)
  • 100A drain current (ID)
  • 100 mOhm on-resistance (RDS(on))
  • High-temperature performance and reliability
  • Low gate charge and intrinsic capacitances for reduced switching losses
  • Body diode with low reverse recovery charge (Qrr)
  • Automotive-grade product compliant with AEC-Q101 standards

The STGWA100H65DFB2 is not only an enabler for high-efficiency power conversion in automotive applications but also contributes to the overall reduction of CO2 emissions by enabling more efficient electric systems. This MOSFET is a testament to STMicroelectronics' commitment to providing innovative solutions that meet the evolving needs of the automotive industry and help pave the way for a greener, more sustainable future.

For detailed specifications, application notes, and additional resources, engineers and designers can visit the STMicroelectronics website or contact their local ST sales office.

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