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STGW35HF60WDI

Part No STGW35HF60WDI
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description Resonant converters
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 60A
Current - Collector Pulsed (Icm) 150A
Vce(on) (Maximum) @ Vge, Ic 2.5V @ 15V, 20A
Power - Max 200W
Switching Energy 185μJ (off)
Input Type Standard
Gate Charge 140nC
Td (on/off) @ 25°C 30ns/175ns
Test Condition 390V, 20A, 10 Ohm, 15V
Reverse Recovery Time (trr) 85ns
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Package TO-247-3
Manufacturer Package TO-247-3
Win Source Part Number 1261045-STGW35HF60WDI
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STGW35HF60WDI CAD Model

Description

The STGW35HF60WDI is a high-performance insulated gate bipolar transistor (IGBT) produced by STMicroelectronics, a leader in semiconductor solutions. This IGBT is designed to cater to a wide range of applications that require efficient power switching and high-speed operation. With its advanced features, the STGW35HF60WDI is a perfect choice for designers looking to enhance system reliability and efficiency in their high-power applications.

Key Features

  • High Voltage Capability: The device is capable of supporting a maximum collector-emitter voltage of 600V, making it suitable for various industrial applications that operate at high voltages.
  • High Current Rating: With a continuous collector current rating of 35A at 25°C, this IGBT can handle significant power levels, which is essential for applications such as motor drives and power inverters.
  • Low On-State Voltage Drop: The STGW35HF60WDI features a low on-state voltage drop, which minimizes conduction losses and enhances overall efficiency.
  • Co-Packaged with Free Wheeling Diode: This IGBT comes with an integrated fast recovery diode, providing a convenient and compact solution for designs requiring a freewheeling diode for inductive loads.
  • High-Speed Switching: The device offers fast switching speeds, which is beneficial for reducing switching losses and improving performance in high-frequency circuits.
  • Robustness and Reliability: Manufactured with STMicroelectronics' advanced technology, the STGW35HF60WDI exhibits excellent ruggedness and thermal performance, ensuring long-term reliability.

Applications

The versatility of the STGW35HF60WDI IGBT allows it to be used in a broad range of applications, including:

  • Uninterruptible Power Supplies (UPS)
  • Motor Drives
  • Power Inverters
  • Switch Mode Power Supplies (SMPS)
  • Welding Equipment
  • Inductive Heating
  • Renewable Energy Systems

With its robust design and high performance, the STGW35HF60WDI is an excellent choice for designers seeking a reliable IGBT that can deliver power and efficiency in demanding environments.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $27.2727 $54.5454
5+ $22.3776 $111.8880
7+ $21.6783 $151.7481
10+ $20.9790 $209.7900
13+ $20.2797 $263.6361
17+ $18.1818 $309.0906
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,196 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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