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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Maximum) 650V
Current - Collector (Ic) (Maximum) 120A
Current - Collector Pulsed (Icm) 240A
Vce(on) (Maximum) @ Vge, Ic 2V @ 15V, 80A
Power - Max 469W
Switching Energy 2.1mJ (on), 1.5mJ (off)
Input Type Standard
Gate Charge 414nC
Td (on/off) @ 25°C 84ns/280ns
Test Condition 400V, 80A, 10 Ohm, 15V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Package TO-247-3
Manufacturer Package TO-247-3
Win Source Part Number 795620-STGW80H65FB
Popularity Medium
Supply and Demand Status Limited
Family Name STGW80H65FB
Introduction Date June 13, 2014
ECCN EAR99
Country of Origin China
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian STGW80H65FB CAD Model

Description

STGW80H65FB - High-Efficiency IGBT from STMicroelectronics

The STGW80H65FB is a state-of-the-art IGBT (Insulated Gate Bipolar Transistor) that is designed and manufactured by STMicroelectronics, a global semiconductor leader known for its focus on delivering energy-efficient and power management solutions. This particular IGBT is part of the STPOWER™ product line, which is renowned for its performance in high-power applications.

With a maximum collector-emitter voltage of 650V and a continuous collector current of 80A at 25°C, the STGW80H65FB is optimized for high-efficiency switching applications. The device is tailored for use in a wide range of power electronics systems, including motor drives, uninterruptible power supplies (UPS), solar inverters, welding equipment, and other high-performance power conversion applications.

One of the key features of the STGW80H65FB is its low on-state voltage drop (V<sub>CE(sat)), which minimizes conduction losses and enhances overall system efficiency. This characteristic, combined with its high-speed switching capabilities, allows for reduced switching losses, making the IGBT ideal for high-frequency operation.

The device is housed in a TO-247 long leads package, which offers excellent thermal performance and is suitable for high current operation. This packaging also facilitates easy mounting on heat sinks, which is critical for maintaining device longevity and reliability under high thermal conditions.

The STGW80H65FB incorporates an advanced trench gate field-stop structure that provides a perfect balance between conduction and switching losses. This technology enables the IGBT to operate at a lower gate charge, thereby reducing the power required to drive the device. Moreover, the robust and rugged design ensures that the IGBT can withstand harsh operating conditions, which is vital for industrial applications.

STMicroelectronics also places a strong emphasis on reliability and quality, ensuring that the STGW80H65FB meets stringent industry standards. Its high immunity to temperature variations and excellent thermal cycling performance make it a reliable choice for designers looking to create efficient, high-performing power management solutions.

In conclusion, the STGW80H65FB from STMicroelectronics is a powerful and efficient IGBT designed for high-power applications that demand reliability, efficiency, and high-speed operation. Its advanced features and robust packaging make it a versatile component suitable for a diverse range of industrial and power electronics systems.

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Quantity Unit Price Ext. Price
8+ $8.2578 $66.0624
20+ $6.7757 $135.5140
30+ $6.5639 $196.9170
41+ $6.3521 $260.4361
53+ $6.1405 $325.4465
71+ $5.5052 $390.8692
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Availability: 40 pieces
MOQ: 8 pcs
Order Increment : 1 piece
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