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STGB5H60DF

Part No STGB5H60DF
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description TRENCH GATE FIELD-STOP IGBT, H S / IGBT Trench Field Stop 600 V 10 A 88 W Surface Mount D²PAK (TO-263)
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr STMicroelectronics
Package Tape & Reel
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 10 A
Current - Collector Pulsed (Icm) 20 A
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 5A
Power - Max 88 W
Switching Energy 56µJ (on), 78.5µJ (off)
Input Type Standard
Gate Charge 43 nC
Td (on/off) @ 25°C 30ns/140ns
Test Condition 400V, 5A, 47Ohm, 15V
Reverse Recovery Time (trr) 134.5 ns
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK (TO-263)
Base Product Number STGB5
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names -497-16478-1,-497-16478-2,2266-STGB5H60DF,497-16478-6,497-16478-1,497-16478-2,-497-16478-6
Standard Package 1,000
Win Source Part Number 1154301-STGB5H60DF
Ultra Librarian 3D Model Ultra Librarian STGB5H60DF CAD Model

Description

STGB5H60DF - IGBT Transistor by STMicroelectronics

The STGB5H60DF is a state-of-the-art IGBT (Insulated Gate Bipolar Transistor) designed and manufactured by STMicroelectronics, a global semiconductor leader. This IGBT is part of the STPOWER™ family, which is known for its high efficiency and performance in power electronics applications. The STGB5H60DF is specifically engineered to cater to the increasing demands of modern electronic circuits requiring high-speed switching, robust thermal performance, and energy efficiency.

With a collector-emitter voltage (VCE) of 600V and a collector current rating of 5A, the STGB5H60DF is well-suited for a wide range of applications, from motor drives and solar inverters to uninterruptible power supplies (UPS) and high-frequency converters. It boasts a low on-state voltage drop (VCE(sat)) due to the utilization of an advanced trench gate field-stop structure, which significantly enhances its conduction efficiency and reduces conduction losses.

The STGB5H60DF offers a tight parameter distribution coupled with a positive VCE(sat) temperature coefficient, ensuring consistent performance and simplified parallel operation. This IGBT also features a fast and soft recovery anti-parallel diode, which minimizes switching losses and enhances the overall system reliability and efficiency, especially in hard-switching applications.

One of the key advantages of the STGB5H60DF is its robustness, with a maximum operating junction temperature of 175°C. This high temperature capability ensures that the device can handle challenging thermal environments and provides designers with greater flexibility in thermal management. Additionally, the IGBT comes in a TO-263 (D2PAK) package, which is known for its compact form factor and excellent thermal characteristics.

STMicroelectronics has also equipped the STGB5H60DF with comprehensive support in terms of application notes, reference designs, and simulation tools, which can significantly accelerate the design process and help engineers to optimize their applications.

In summary, the STGB5H60DF IGBT is a high-performance, efficient, and reliable solution for a variety of power switching applications. Its advanced features and robust design make it an ideal choice for engineers looking to enhance system performance while maintaining energy efficiency and thermal management.

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.8902 $57.8630
160+ $0.7304 $116.8640
245+ $0.7077 $173.3865
340+ $0.6848 $232.8320
440+ $0.6620 $291.2800
585+ $0.5934 $347.1390
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Availability: 1,537 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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