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Same model may have multiple batches, images only for reference.
IKN01N60RC2ATMA1
Same model may have multiple batches, images only for reference.

IKN01N60RC2ATMA1

Part No IKN01N60RC2ATMA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description HOME APPLIANCES 14 PG-SOT223-3
Datasheet
IKN01N60RC2ATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Infineon Technologies
Series -
Package Tape & Reel
Product Status Active
IGBT Type -
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 2.2 A
Current - Collector Pulsed (Icm) 3 A
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 1A
Power - Max 5.1 W
Switching Energy 25.1µJ (on), 13.5µJ (off)
Input Type Standard
Gate Charge 9 nC
Td (on/off) @ 25°C 5.6ns/80ns
Test Condition 400V, 1A, 49Ohm, 15V
Reverse Recovery Time (trr) 59.5 ns
Temperature Range - Operating -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Supplier Device Package PG-SOT223-3
Base Product Number IKN01N
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1376617-IKN01N60RC2ATMA1
Ultra Librarian 3D Model Ultra Librarian IKN01N60RC2ATMA1 CAD Model

Description

The IKN01N60RC2ATMA1 is a single IGBT (Insulated Gate Bipolar Transistor) designed for use in discrete semiconductor products.

  • Category: Infineon Technologies' IGBTs - Single IGBTs
  • Maximum Collector-Emitter Breakdown Voltage: 600V
  • Maximum Collector Current: 2.2A
  • Operating Temperature Range: -40°C to 150°C
  • Power Dissipation: 5.1W
  • Input Type: Standard
  • Gate Charge: 9nC
  • Mounting: Surface Mountable in a TO-261-4, TO-261AA package
  • Status: Currently Active
  • Packaging: Tape and Reel
  • REACH: Unaffected
  • ECCN: EAR99

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