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STGB30H65FB

Part No STGB30H65FB
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr STMicroelectronics
Series HB
Package Tape & Reel (TR)
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 60 A
Current - Collector Pulsed (Icm) 120 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 30A
Power - Max 260 W
Switching Energy 151µJ (on), 293µJ (off)
Input Type Standard
Gate Charge 149 nC
Td (on/off) @ 25°C 37ns/146ns
Test Condition 400V, 30A, 10Ohm, 15V
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK (TO-263)
Base Product Number STGB30
Standard Package 1,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277371-STGB30H65FB
Ultra Librarian 3D Model Ultra Librarian STGB30H65FB CAD Model

Description

STGB30H65FB - High-Efficiency IGBT from STMicroelectronics

The STGB30H65FB is a cutting-edge Insulated Gate Bipolar Transistor (IGBT) developed by STMicroelectronics, a global semiconductor leader known for its innovative and reliable products. This particular IGBT is designed to offer a perfect blend of low conduction and switching losses, making it an excellent choice for a wide range of high-efficiency applications.

With a maximum collector-emitter voltage of 650V and a continuous collector current of 60A at 25°C, the STGB30H65FB is built to handle significant power levels. Its high current capability is complemented by a low saturation voltage of typically 1.85V, which translates into reduced power dissipation and improved overall efficiency in operation.

The device utilizes STMicroelectronics' advanced trench gate field-stop technology, which is engineered to optimize its performance in terms of both switching speed and energy efficiency. This technology allows the STGB30H65FB to achieve lower on-state voltage drop and minimized switching losses, making it suitable for high-frequency power switching applications.

With a maximum junction temperature of 175°C, the STGB30H65FB can operate reliably in high-temperature environments, which is critical for applications such as solar inverters, uninterruptible power supplies (UPS), and motor drives. Its robustness is further enhanced by a co-packaged freewheeling diode with a low forward voltage drop, providing additional protection against reverse recovery issues and reducing electromagnetic interference (EMI).

The STGB30H65FB is housed in a TO-263 (D2PAK) package, which is known for its excellent thermal performance and compact size. This packaging allows for efficient heat dissipation and makes it easier to integrate the IGBT into space-constrained designs.

In summary, the STGB30H65FB from STMicroelectronics is a high-performance IGBT that offers an optimal solution for designers looking to improve the efficiency and reliability of their power conversion systems. Its advanced features and robust design make it a versatile component for a variety of demanding applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.4649 $51.2715
85+ $1.2020 $102.1700
130+ $1.1645 $151.3850
180+ $1.1269 $202.8420
230+ $1.0893 $250.5390
310+ $0.9766 $302.7460
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Availability: 6,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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