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IGD01N120H2

Part No IGD01N120H2
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description Trans IGBT Chip N-CH 1200V 3.2A 28000mW 3-Pin(2+Tab) DPAK T/R / HighSpeed 2-Technology
Sample
Rohs State rohs
ECAD Module
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Manufacturer Infineon Technologies
Win Source Part Number 1185264-IGD01N120H2
Manufacturer Homepage www.infineon.com
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name IGD01N120H2
Introduction Date June 12, 2003
ECCN EAR99
Country of Origin Malaysia
Halogen Free Not Compliant
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian IGD01N120H2 CAD Model

Description

The Infineon Technologies IGD01N120H2 is an N-channel IGBT transistor designed for use in power management and industrial applications.

  • Voltage Collector-Emitter (Max): 1200V
  • Current Collector (Continuous): 1A
  • Vce(on): 2.2V @ 15V, 25A
  • Gate Charge: 25nC
  • Package / Case: TO-252-3
  • Operating Temperature: -55°C to 150°C
  • Compliance: EAR99
  • Estimated EOL Date: 2024

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Pricing & Ordering

Quantity Unit Price Ext. Price
20+ $2.5071 $50.1420
49+ $2.0572 $100.8028
76+ $1.9929 $151.4604
104+ $1.9286 $200.5744
135+ $1.8643 $251.6805
180+ $1.6714 $300.8520
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,500 pieces
MOQ: 20 pcs
Order Increment : 1 pcs
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