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STGB10H60DF

Part No STGB10H60DF
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description IGBT 600V 20A 115W D2PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 27 Weeks
Features IGBT Trench Field Stop 600 V 20 A 115 W Surface Mount D²PAK (TO-263)
Manufacturer STMicroelectronics
Package Reel - TR
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Surface Mount
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Case / Package D2PAK (TO-263)
Family Name STGB10
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number 497-14975-6, -497-14975-2, -497-14975-1, 497-14975-1, -497-14975-6, 497-14975-2
Quantity per package 1000
Popularity High
Supply and Demand Status Balance
Win Source Part Number 935351-STGB10H60DF
Ultra Librarian 3D Model Ultra Librarian STGB10H60DF CAD Model

Description

STGB10H60DF - IGBT from STMicroelectronics

The STGB10H60DF is a state-of-the-art Insulated Gate Bipolar Transistor (IGBT) developed by STMicroelectronics, a global semiconductor leader. This IGBT is designed to offer a high level of efficiency and reliability for a wide range of power applications. It is particularly well-suited for applications that require fast switching and high current capability, such as motor drives, uninterruptible power supplies (UPS), and power inverters for renewable energy sources.

This device features a robust and cost-effective Field Stop Trench technology that provides superior performance in terms of switching speed and energy efficiency. The STGB10H60DF has a collector-emitter voltage (V<sub>CE) rating of 600V and can handle continuous collector current up to 10A, making it a versatile choice for medium-power applications.

One of the notable characteristics of the STGB10H60DF is its low on-state voltage drop (V<sub>CE(sat)), which reduces power dissipation and improves overall efficiency. Additionally, the device boasts a high-speed switching capability, which is essential for reducing switching losses and improving performance in high-frequency circuits.

The STGB10H60DF comes in a surface mount D2PAK package, which is known for its compact size and excellent thermal performance. This package allows for efficient heat dissipation and is suitable for high-density PCB layouts, saving valuable board space without compromising power handling capabilities.

Other features of the STGB10H60DF include a co-packaged fast recovery diode, which is optimized for the high-speed switching of the IGBT. This integrated diode helps to reduce component count and simplifies circuit design. The device also offers a maximum junction temperature of 175°C, providing a wide operating temperature range that ensures stability and performance under varying environmental conditions.

STMicroelectronics provides comprehensive technical support and documentation for the STGB10H60DF, including datasheets, application notes, and design resources, making it easier for engineers to integrate this IGBT into their designs. With its combination of high efficiency, fast switching, and thermal performance, the STGB10H60DF is a reliable and powerful solution for modern power electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
16+ $3.3086 $52.9376
37+ $2.7148 $100.4476
58+ $2.6300 $152.5400
79+ $2.5451 $201.0629
102+ $2.4603 $250.9506
137+ $2.2058 $302.1946
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Availability: 3,907 pieces
MOQ: 16 pcs
Order Increment : 1 pcs
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