STB180N10F3 - STMicroelectronics N-Channel MOSFET

The STB180N10F3 from STMicroelectronics is a high-performance N-channel MOSFET designed for a wide range of applications, including power supply, motor control, and power management solutions. This robust semiconductor device is a part of the STripFET F3 series, which is renowned for its low on-resistance and high switching performance.

Key Features:

• Low On-Resistance: With an R_DS(on) of only 8.5 mΩ max, this MOSFET provides highly efficient power conversion, which can lead to energy savings in various applications.
• High Current Capability: The STB180N10F3 supports a continuous drain current (I_D) of up to 120A, making it suitable for high current applications.
• High Voltage Rating: The device can handle drain-source voltages (V_DS) up to 100V, providing a wide safety margin for applications with high voltage requirements.
• Low Gate Charge: A low gate charge (Q_g) enhances the switching performance, which is crucial for high-efficiency power converters and inverters.
• 100% Avalanche Tested: Ensures reliability and robustness against repetitive avalanche events, contributing to the longevity of the device in harsh conditions.

Applications:

The STB180N10F3 is versatile and can be used in a variety of applications, such as:

• Switch Mode Power Supplies (SMPS)
• High Efficiency DC-DC Converters
• Motor Drives and Inverters
• Synchronous Rectification
• Battery Management Systems
• Solar Power Inverters

Package and Environmental Compliance:

The STB180N10F3 is offered in a TO-220 package, which is widely used and allows for efficient heat dissipation. Additionally, it complies with environmental standards, including RoHS and is Halogen-free, ensuring its suitability for environmentally sensitive applications.

Overall, the STB180N10F3 MOSFET from STMicroelectronics is a reliable and efficient solution for designers looking to improve the performance and energy efficiency of their power management systems.