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STW56N60DM2

Part No STW56N60DM2
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description Extremely high dv/dt ruggedness
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Series MDmesh DM2
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 600V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 90nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 4100pF @ 100V
Vgs (Maximum) ±25V
Power Dissipation (Maximum) 360W (Tc)
Rds On (Maximum) @ Id, Vgs 60 mOhm @ 25A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-247
Package TO-247-3
Win Source Part Number 1262377-STW56N60DM2
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Family Name STW56N60DM2
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2028
Ultra Librarian 3D Model Ultra Librarian STW56N60DM2 CAD Model

Description

STW56N60DM2 - High Performance Power MOSFET by STMicroelectronics

The STW56N60DM2 is a state-of-the-art power MOSFET designed and manufactured by STMicroelectronics, a global leader in semiconductor solutions. This device is part of ST's MDmesh™ DM2 series, which is known for its high energy efficiency and reliability. The STW56N60DM2 is specifically crafted to meet the demanding requirements of modern electronic applications, including switch-mode power supplies (SMPS), lighting, welding, and high-performance drives.

With its advanced technology, the STW56N60DM2 offers a combination of low on-resistance and high switching speed, making it an excellent choice for high-efficiency power conversion systems. The MOSFET features a breakdown voltage of 600V, which provides a comfortable margin for applications dealing with high voltage levels. This ensures safe operation under a variety of conditions and contributes to the longevity and reliability of the end product.

One of the key attributes of the STW56N60DM2 is its enhanced power density, which is achieved through a reduction in die size compared to traditional designs. This allows for a more compact and lighter solution without compromising performance. Additionally, the device boasts an improved figure of merit (FOM) that minimizes conduction and switching losses, further enhancing its efficiency.

The STW56N60DM2 also incorporates STMicroelectronics' proprietary strip layout, which contributes to its excellent RDS(on) characteristics. This, combined with its fast recovery diode, ensures reduced switching losses and better EMI behavior, which is crucial for applications sensitive to electromagnetic interference.

For ease of integration, this power MOSFET comes in a TO-247 package, which is widely used in the industry and known for its robustness. It is suitable for both hard-switching and resonant topologies, giving designers the flexibility to use it in a broad range of applications.

In summary, the STW56N60DM2 from STMicroelectronics is a high-performance power MOSFET that offers excellent efficiency, reliability, and versatility, making it a top choice for engineers looking to optimize their power management systems.

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Quantity Unit Price Ext. Price
5+ $10.2632 $51.3160
12+ $8.4211 $101.0532
19+ $8.1579 $155.0001
26+ $7.8948 $205.2648
33+ $7.6316 $251.8428
44+ $6.8422 $301.0568
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Availability: 4,665 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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