The M24128-DRMN3TP/K is a high-performance 128-Kbit I2C-compatible EEPROM (Electrically Erasable Programmable Read-Only Memory) from STMicroelectronics, which is one of the leading names in the semiconductor industry. This EEPROM device is designed for a wide array of applications that require data storage that can be electrically erased and reprogrammed. It is particularly well-suited for advanced, flexible, and cost-effective non-volatile memory solutions.

Key Features

• Memory size: 128 Kbits with an organization of 16,384 x 8 bits
• Serial I2C bus interface which supports 400 kHz protocol
• Write cycle endurance of 1 million cycles with a data retention of 40 years, ensuring reliability and longevity of stored data
• Operating voltage range of 2.5V to 5.5V, allowing for flexibility in various circuit designs
• Internally organized as 512 pages of 32 bytes each, for efficient data management
• Partial page writes allowed, which makes it ideal for applications that require frequent updates to small data sets
• Two wire serial interface, supports bidirectional data transfer protocol
• Write control through byte and page write (up to 64 bytes)
• Random and sequential read modes, providing versatile data access methods
• Automatic address incrementing, which simplifies data stream handling
• Software Write Protect: Two lockable bytes at the bottom of the memory array
• Lead-free, halogen-free, and RoHS compliant, making it an environmentally friendly choice

Applications

The M24128-DRMN3TP/K is an ideal EEPROM choice for a variety of applications that require robust and reliable non-volatile memory storage. These include, but are not limited to:

• Industrial and medical equipment
• Consumer electronics
• Data storage systems
• Smart cards
• Personal computers and servers
• Portable devices and IoT products

With its advanced features and STMicroelectronics' reputation for quality, the M24128-DRMN3TP/K EEPROM is a dependable and flexible solution for storing critical data that must endure across power cycles and the test of time.