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Same model may have multiple batches, images only for reference.
PJT138K_R1_00001 Panjit
Same model may have multiple batches, images only for reference.

PJT138K_R1_00001

Part No PJT138K_R1_00001
Manufacturer Panjit
Catalog FETs - Arrays
Description 50V N-CHANNEL ENHANCEMENT MODE M
Datasheet
PJT138K_R1_00001 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Panjit International Inc.
Series -
Package Tape & Reel
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature -
Drain to Source Voltage (Vdss) 50V
Current - Continuous Drain (Id) @ 25°C 360mA (Ta)
Rds On (Max) @ Id, Vgs 1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V
Power - Max 236mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SOT-363
Base Product Number PJT138
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1376791-PJT138K_R1_00001
Ultra Librarian 3D Model Ultra Librarian PJT138K_R1_00001 CAD Model

Description

The PJT138K is a dual N-channel MOSFET array manufactured by Panjit International Inc. PJT138K.

  • Package: 6-TSSOP
  • Series: PJT138
  • Drain-to-Source Voltage (Vdss): 50V
  • Continuous Drain Current (Id): 360mA @ 25°C
  • Maximum Gate-Source Voltage (Vgs): ±20V
  • Gate Charge (Qg): 1nC @ 4.5V
  • On-Resistance (Rds On): 1.6Ohm @ 500mA, 10V
  • Input Capacitance (Ciss): 50pF @ 25V
  • Power Dissipation: 236mW

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Quantity Unit Price Ext. Price
955+ $0.0524 $50.0420
2,330+ $0.0430 $100.1900
3,600+ $0.0417 $150.1200
4,965+ $0.0403 $200.0895
6,415+ $0.0390 $250.1850
8,575+ $0.0350 $300.1250
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