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Same model may have multiple batches, images only for reference.
IRF8915 Real Image
Same model may have multiple batches, images only for reference.

IRF8915

Part No IRF8915
Manufacturer Infineon Technologies
Catalog FETs - Arrays
Description HEXFETPower MOSFET | MOSFET 2N-CH 20V 8.9A 8-SOIC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity 2 N-Channel (Dual)
FET Feature Logic Level Gate
Vds - Drain-Source Breakdown Voltage 20V
Id - Continuous Drain Current 8.9A
Rds On (Maximum) at Id, Vgs 18.3mOhm at 8.9A, 10V
Gate Source Voltage(th) (Maximum) at Id 2.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 7.4nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds 540pF at 10V
Maximum Power 2W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package 8-SOIC
Supplier Device Package 8-SO
Manufacturer Pack Quantity 95
MSL Level 1 (Unlimited)
Win Source Part Number 1187422-IRF8915
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF8915 CAD Model

Description

The Infineon Technologies 1187422-IRF8915 is a dual N-channel MOSFET.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 8.9A
  • Maximum Power: 2W
  • Package: 8-SO supplier device package
  • Gate Charge (Qg): 7.4nC @ 4.5V
  • Input Capacitance: 540pF @ 10V
  • Gate FET Feature: Logic level gate FET
  • Suitable for: Discrete semiconductor products

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Pricing & Ordering

Quantity Unit Price Ext. Price
135+ $0.4379 $59.1165
325+ $0.3594 $116.8050
500+ $0.3481 $174.0500
690+ $0.3370 $232.5300
890+ $0.3256 $289.7840
1,190+ $0.2920 $347.4800
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Availability: 50,000 pieces
MOQ: 135 pcs
Order Increment : 1 pcs
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