ON Semiconductor SMBT3904DW1T1G Bipolar Transistor

The ON Semiconductor SMBT3904DW1T1G is a versatile and high-performance NPN bipolar (BJT) transistor, designed to meet the demanding requirements of modern electronic applications. This compact and efficient component is ideal for a wide range of uses, from signal processing to power management in both industrial and consumer products.

Key Features

• Device Type: NPN Bipolar Transistor
• Configuration: Dual in Series
• Collector-Emitter Voltage (VCEO): 40V
• Collector-Base Voltage (VCBO): 60V
• Emitter-Base Voltage (VEBO): 6V
• Collector Current (IC): 200mA
• Power Dissipation: 225mW
• DC Current Gain (hFE): 100 to 300 at 10mA
• High Transition Frequency: fT of 300MHz for excellent switching performance
• Package: SC-88 (SOT-363) surface-mount package for space-saving design
• Operating Temperature Range: -55°C to +150°C

Applications

The SMBT3904DW1T1G is suitable for a variety of applications, including but not limited to:

• Switching and Amplification
• Signal Processing
• Power Management Circuits
• Voltage and Current Regulators
• General Purpose Switching
• Consumer Electronics
• Telecommunications

Quality and Reliability

ON Semiconductor is known for its commitment to quality and reliability, and the SMBT3904DW1T1G is no exception. This component is manufactured to the highest standards, ensuring stable performance and longevity in the most challenging conditions. It is also RoHS compliant, reflecting ON Semiconductor's dedication to environmental responsibility.

Conclusion

The SMBT3904DW1T1G from ON Semiconductor is a high-quality, dual NPN bipolar transistor that offers excellent performance in a small package. Its robust design and versatile application range make it a valuable component for designers looking to optimize their electronic circuits. With its impressive specifications and ON Semiconductor's reputation for reliability, the SMBT3904DW1T1G is an excellent choice for your next project.