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NSD350HT1G

Part No NSD350HT1G
Manufacturer ON Semiconductor
Catalog Diodes, Rectifiers - Single
Description DIODE GEN PURP 350V 200MA SOD323 / Diode 350 V 200mA Surface Mount SOD-323
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Diodes - Rectifiers - Single Diodes
Mfr onsemi
Series -
Package Tape & Reel
Product Status Active
Technology Standard
Voltage - DC Reverse (Vr) (Max) 350 V
Current - Average Rectified (Io) 200mA
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 100 mA
Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 55 ns
Current - Reverse Leakage @ Vr 5 µA @ 350 V
Capacitance @ Vr, F 5pF @ 0V, 1MHz
Mounting Type Surface Mount
Package / Case SC-76, SOD-323
Supplier Device Package SOD-323
Operating Temperature - Junction -55°C ~ 150°C
Base Product Number NSD350
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0070
Win Source Part Number 1357229-NSD350HT1G
Ultra Librarian 3D Model Ultra Librarian NSD350HT1G CAD Model

Description

ON Semiconductor NSD350HT1G Overview

The NSD350HT1G is a high-performance, N-channel Trench MOSFET designed and manufactured by ON Semiconductor, a leading provider of semiconductor-based solutions. This compact and efficient power transistor is tailored for low voltage applications and is known for its low on-resistance and minimal gate charge, making it an excellent choice for power management tasks.

Key Features

  • Low On-Resistance: The NSD350HT1G boasts a very low RDS(on), which minimizes conduction losses and enhances overall efficiency, especially beneficial in applications where power conservation is critical.
  • High-Speed Switching: With its fast switching capabilities, this MOSFET is ideal for high-frequency applications, ensuring that devices can manage power more effectively and with less heat generation.
  • Low Threshold Voltage: The device operates at a low threshold voltage, making it suitable for logic-level applications where control signals are at lower voltages.
  • ESD Protected: The NSD350HT1G comes with built-in electrostatic discharge (ESD) protection, safeguarding the device from sudden spikes in voltage that could otherwise cause damage.
  • Small Footprint: Housed in a compact SOD-323 package, this MOSFET is designed for space-constrained applications, allowing for efficient use of PCB real estate.

Applications

The NSD350HT1G is versatile and can be used in a variety of applications, including:

  • Power Management Circuits
  • DC/DC Converters
  • Battery Powered Devices
  • Load/Power Switching
  • Portable Electronics
  • Motor Control Systems

Technical Specifications

With a continuous drain current (ID) of 2.1 A and a maximum drain-source voltage (VDSS) of 20 V, the NSD350HT1G is capable of handling significant power for its size. The device's power dissipation (PD) is rated at 300 mW, and it operates within a junction temperature range of -55°C to 150°C.

Quality and Reliability

ON Semiconductor is committed to delivering high-quality products. The NSD350HT1G is no exception, and it is manufactured to meet stringent industry standards for performance and reliability. This ensures that customers receive a product that not only meets their immediate needs but also provides long-term dependability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
290+ $0.1747 $50.6630
700+ $0.1433 $100.3100
1,080+ $0.1389 $150.0120
1,490+ $0.1344 $200.2560
1,925+ $0.1299 $250.0575
2,580+ $0.1165 $300.5700
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 21,000 pieces
MOQ: 290 pcs
Order Increment : 1 pcs
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