The 2SK3615-TL-E is a high-performance N-Channel MOSFET brought to you by ON Semiconductor, a leader in energy-efficient innovations. This MOSFET is designed to meet a wide range of applications, offering a robust and reliable solution for engineers and designers alike.
Key Features
- Low On-Resistance: The 2SK3615-TL-E boasts a low on-resistance, which translates to reduced losses during operation and enhances overall efficiency.
- High-Speed Switching: Engineered for high-speed switching applications, this MOSFET minimizes switching losses and is suitable for high-frequency power supplies and converters.
- High Drain-Source Voltage (Vdss): With a high drain-source voltage rating, it can handle up to 900V, making it ideal for high voltage applications.
- Low Drive Power: It requires low drive power, which makes it easier to control with simple drive circuits and contributes to energy savings.
- Enhanced Durability: The device is encapsulated in a RoHS-compliant, halogen-free package, ensuring long-term reliability and environmental sustainability.
Applications
The versatility of the 2SK3615-TL-E MOSFET allows it to be used in a variety of applications, including:
- Power Supply Units (PSUs)
- DC-DC Converters
- Motor Drives
- Inverters
- Switching Regulators
- Lighting Systems
Technical Specifications
Parameter
Value
Configuration
Single
Channel Mode
Enhancement
Channel Type
N-Channel
Drain-Source Voltage (Vdss)
900V
Continuous Drain Current (Id)
4A
Power Dissipation (Pd)
50W
Operating Temperature Range
-55°C to +150°C
With its advanced technology and superior performance, the 2SK3615-TL-E from ON Semiconductor is an excellent choice for designers looking to enhance the efficiency and reliability of their electronic applications.
