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MMZ38333BT1

Part No MMZ38333BT1
Manufacturer NXP / Nexperia
Catalog RF Amplifiers
Description IC RF AMP 3.4GHZ-3.8GHZ 24HVQFN / High Efficiency/Linearity Amplifier
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer NXP USA Inc.
Packaging Reel
Frequency 3.4GHz ~ 3.8GHz
P1dB 31.7dBm
Gain 37.9dB
Supply Voltage (V) 5V
Current - Supply 376mA
Test Frequency 3.6GHz
Manufacturer Package 24-VFQFN Exposed Pad
Supplier Device Package 24-HVQFN (4x4)
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 809672-MMZ38333BT1
Ultra Librarian 3D Model Ultra Librarian MMZ38333BT1 CAD Model

Description

The NXP MMZ38333BT1 is a high-performance, RF power transistor designed to meet the rigorous demands of today's wireless communication systems. This product is part of NXP's extensive portfolio of RF solutions, which are tailored to provide efficient, reliable performance for a variety of applications, including base station transceivers, RF energy, and industrial, scientific, and medical (ISM) applications.

Key Features

  • Frequency Range: The MMZ38333BT1 operates over a broad frequency range, making it highly versatile for different RF applications.
  • High Gain: This transistor offers excellent gain characteristics, ensuring strong signal amplification for clearer communication.
  • Efficiency: With its advanced design, the MMZ38333BT1 achieves high levels of efficiency, reducing power consumption and heat generation.
  • Robustness: Engineered for durability, the product is capable of withstanding severe operating conditions, making it suitable for both commercial and rugged environments.
  • Package: The device comes in a compact package, allowing for easier integration into space-constrained designs without sacrificing performance.

Applications

The versatility of the NXP MMZ38333BT1 allows it to be used in a wide range of applications. It is particularly well-suited for:

  • Wireless infrastructure for LTE, GSM, CDMA, and WCDMA
  • RF energy applications, including industrial heating and plasma generation
  • ISM band applications, such as RFID and sensor networks
  • Professional mobile radio and aerospace & defense communication systems

Technical Specifications

For engineers and designers considering the MMZ38333BT1 for their systems, the following are some of the technical specifications:

  • Supply Voltage (V): Specified per application requirements
  • Output Power: Capable of delivering significant power for high-demand systems
  • Operating Temperature Range: Designed to perform over a wide temperature range

In conclusion, the NXP MMZ38333BT1 RF power transistor is a reliable and efficient solution for a multitude of RF applications. Its robust design, coupled with high gain and efficiency, makes it an ideal choice for system designers looking to improve communication performance and system reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $11.5778 $57.8890
11+ $9.4997 $104.4967
17+ $9.2029 $156.4493
23+ $8.9060 $204.8380
30+ $8.6091 $258.2730
39+ $7.7185 $301.0215
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Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 21,000 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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