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Categories Integrated Circuits
Manufacturer Linear Technology
Packaging Tube/Rail
Status Obsolete(EOL)
Driven Configuration Half-Bridge
Channel Type Synchronous
Number of Drivers 2
Gate Type N-Channel MOSFET
Supply Voltage - Operating 4 V to 6.5 V
Logic Voltage - VIL, VIH 2.5V, 3V
Current - Peak Output (Source, Sink) 3.2A, 3.2A
Input Type Non-Inverting
High Side Voltage - Max (Bootstrap) 42V
Rise and Fall Time 8ns, 7ns
Temperature Range - Operating -40°C to 125°C (TJ)
Mounting SMD (SMT)
Case / Package 12-DFN (3x3)
Win Source Part Number 1063735-LTC4447EDD#PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian LTC4447EDD#PBF CAD Model

Description

LTC4447EDD#PBF High Voltage, High Side N-Channel MOSFET Driver

The LTC4447EDD#PBF from Linear Technology is a powerful high-side driver designed to control N-Channel MOSFETs in a variety of high voltage applications. This robust component ensures efficient management of power MOSFETs, making it an ideal choice for DC/DC converters, power supplies, and motor control circuits where precise and reliable MOSFET driving is required.

This driver operates over a voltage range of 4V to 15V, making it versatile for different circuit configurations. The LTC4447EDD#PBF is capable of driving a large gate capacitance with very short transition times, resulting in reduced switching losses and improved overall efficiency. The high peak output current of up to 2.5A ensures that the MOSFETs are switched rapidly, minimizing power dissipation.

One of the key features of the LTC4447EDD#PBF is its strong immunity to input supply noise, which is critical in high-frequency and high-voltage environments. The driver includes an under-voltage lockout feature that ensures the driver is operational only when the input supply voltage is within the specified range, protecting the MOSFETs from inadequate gate voltage.

The LTC4447EDD#PBF also offers protection features such as an adjustable turn-on slew rate, which helps to mitigate EMI and reduce inrush currents, and a driver supply voltage range that matches the MOSFET gate voltage requirements. This ensures compatibility with a wide array of MOSFETs, allowing designers to choose the best MOSFET for their application without worrying about driver compatibility.

Its thermally efficient DFN package with a low-profile (0.75mm) and small footprint (3mm x 3mm) is perfect for space-constrained applications. The LTC4447EDD#PBF is lead-free and RoHS compliant, adhering to environmental standards and regulations.

In summary, the LTC4447EDD#PBF from Linear Technology is a sophisticated, high-performance MOSFET driver that provides robust features for high-side driving applications. With its strong driving capabilities, noise immunity, and comprehensive protection features, it stands as a solid choice for engineers looking to enhance the performance and reliability of their high voltage power systems.

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