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Same model may have multiple batches, images only for reference.
IXFX32N80P Real Image
Same model may have multiple batches, images only for reference.

IXFX32N80P

Part No IXFX32N80P
Manufacturer IXYS
Catalog FETs - Single
Description PolarHV HiPerFET Power MOSFET | MOSFET N-CH 800V 32A PLUS247
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 800V
Id - Continuous Drain Current 32A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 270mOhm at 16A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 8mA
Gate Charge (Qg) (Maximum) at Vgs 150nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 8800pF at 25V
Power Dissipation (Maximum) 830W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package PLUS247-3
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 30
MSL Level 1 (Unlimited)
Win Source Part Number 1191151-IXFX32N80P
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXFX32N80P CAD Model

Description

The IXFX32N80P is a MOSFET transistor manufactured by IXYS.

  • Channel Type: N-channel
  • Drain-Source Breakdown Voltage: 800V
  • Continuous Drain Current: 32A
  • Maximum On-Resistance: 270mOhm @ 16A and 10V
  • Maximum Gate-Source Voltage: ±30V
  • Gate-Source Threshold Voltage: 5V @ 8mA
  • Gate Charge: 150nC @ 10V
  • Input Capacitance: 8800pF @ 25V
  • Power Dissipation: 830W
  • Package: TO-247-3
  • Operating Temperature: -55°C to 150°C
  • Ideal for: Power supplies, motor control, and lighting systems

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