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IXFT13N80Q

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Part No	IXFT13N80Q
Manufacturer	IXYS
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 800V 13A TO268 / N-Channel 800 V 13A (Tc) 250W (Tc) Surface Mount TO-268AA
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	IXYS
Series	HiPerFET™, Q Class
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800 V
Current - Continuous Drain (Id) @ 25°C	13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	700mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id	4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs	90 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3250 pF @ 25 V
Power Dissipation (Max)	250W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting	SMD (SMT)
Supplier Device Package	TO-268AA
Package / Case	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Base Product Number	IXFT13
MSL Level	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	30
Win Source Part Number	1001111-IXFT13N80Q
Ultra Librarian 3D Model	Ultra Librarian IXFT13N80Q CAD Model

Alternative Products

Description

The IXYS HiPerFET™ IXFT13N80Q is a N-Channel MOSFET transistor with a drain-source voltage rating of 800 V and a continuous drain current rating of 13 A. It features a maximum on-resistance of 700 mOhm at a gate-source voltage of 10 V and a drain current of 6.5 A. The IXFT13N80Q is housed in a TO-268-3 package with a TO-268AA supplier device package and has a power dissipation rating of 250 W. This product is part of the Discrete Semiconductor Products category and is considered obsolete. It is supplied in a tube package with 30 units per package.

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