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IXFR24N100Q3

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This model is a standard, industry-grade component frequently used in electronic manufacturing.

Part No	IXFR24N100Q3
Manufacturer	IXYS
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 1000V 18A ISOPLUS247 / N-Channel 1000 V 18A (Tc) 500W (Tc) Through Hole ISOPLUS247™
Datasheet	IXFR24N100Q3 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	IXYS
Series	HiPerFET™, Q3 Class
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1000 V
Current - Continuous Drain (Id) @ 25°C	18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	490mOhm @ 12A, 10V
Vgs(th) (Max) @ Id	6.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs	140 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	7200 pF @ 25 V
Power Dissipation (Max)	500W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	ISOPLUS247™
Package / Case	TO-247-3
Base Product Number	IXFR24
MSL Level	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	30
Win Source Part Number	1022152-IXFR24N100Q3
Ultra Librarian 3D Model	Ultra Librarian IXFR24N100Q3 CAD Model

Alternative Products

Description

The IXFR24N100Q3 is an N-Channel MOSFET transistor that belongs to the HiPerFET™ series and Q3 class.

Drain to Source Voltage: 1000V
Continuous Drain Current: 18A @ 25°C
Maximum On-Resistance: 490mOhm @ 12A and 10V
Gate Threshold Voltage: 6.5V @ 4mA
Gate Charge: 140nC @ 10Vgs
Designed for: Discrete semiconductor products such as transistors, FETs, and MOSFETs
Power Dissipation: 500W @ Tc
Temperature Range: -55°C to 150°C (TJ)
Package: through-hole TO-247-3 with ISOPLUS247™ supplier device package

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