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IXFR180N07

Name: IXFR180N07
Brand: IXYS
SKU: 1225668
Availability: InStock
Rating: 4.84 (5 reviews)

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This model is a standard, industry-grade component frequently used in electronic manufacturing.

Part No	IXFR180N07
Manufacturer	IXYS
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 70V 180A ISOPLUS247 / N-Channel 70 V 180A (Tc) 417W (Tc) Through Hole ISOPLUS247™
Sample
Rohs State
ECAD Module
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Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	IXYS
Series	HiPerFET™
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	70 V
Current - Continuous Drain (Id) @ 25°C	180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	6mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id	4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs	420 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	9400 pF @ 25 V
Power Dissipation (Max)	417W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	ISOPLUS247™
Package / Case	TO-247-3
MSL Level	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	30
Win Source Part Number	1225668-IXFR180N07
Ultra Librarian 3D Model	Ultra Librarian IXFR180N07 CAD Model

Description

The IXFR180N07 is a N-Channel MOSFET transistor designed for use in Discrete Semiconductor Products - Transistors - FETs, MOSFETs.

Series: HiPerFET™
Drain to Source Voltage (Vdss): 70 V
Power Dissipation (Max): 417W (Tc)
Mounting: Through Hole
Package/Case: TO-247-3
Operating Temperature: -55°C ~ 150°C (TJ)
Gate-Source Voltage (Vgs): ±20V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 500mA, 10V
Manufacturer: IXYS

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