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Same model may have multiple batches, images only for reference.
IXFR180N07 Real Image
Same model may have multiple batches, images only for reference.

IXFR180N07

Part No IXFR180N07
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 70V 180A ISOPLUS247  /  N-Channel 70 V 180A (Tc) 417W (Tc) Through Hole ISOPLUS247™
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr IXYS
Series HiPerFET™
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 70 V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 6mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 420 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9400 pF @ 25 V
Power Dissipation (Max) 417W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package ISOPLUS247™
Package / Case TO-247-3
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 30
Win Source Part Number 1225668-IXFR180N07
Ultra Librarian 3D Model Ultra Librarian IXFR180N07 CAD Model

Description

The IXFR180N07 is a N-Channel MOSFET transistor designed for use in Discrete Semiconductor Products - Transistors - FETs, MOSFETs.

  • Series: HiPerFET™
  • Drain to Source Voltage (Vdss): 70 V
  • Power Dissipation (Max): 417W (Tc)
  • Mounting: Through Hole
  • Package/Case: TO-247-3
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Gate-Source Voltage (Vgs): ±20V
  • Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
  • Rds On (Max) @ Id, Vgs: 6mOhm @ 500mA, 10V
  • Manufacturer: IXYS

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