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Same model may have multiple batches, images only for reference.
A2T26H160-24SR3
Same model may have multiple batches, images only for reference.

A2T26H160-24SR3

Part No A2T26H160-24SR3
Manufacturer Freescale Semiconductor - NXP
Catalog Transistors - FETs, MOSFETs - RF
Description RF POWER FIELD-EFFECT TRANSISTOR  /  RF Mosfet LDMOS (Dual) 28 V 350 mA 2.58GHz 15.5dB 28W NI-780S-4L2L
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - RF
Mfr Freescale Semiconductor
Package Bulk
Transistor Type LDMOS (Dual)
Frequency 2.58GHz
Gain 15.5dB
Voltage - Test 28 V
Current - Test 350 mA
Power - Output 28W
Voltage - Rated 65 V
Package / Case NI-780S-4L2L
Supplier Device Package NI-780S-4L2L
ECCN EAR99
HTSUS 8541.29.0075
Other Names NXPFREA2T26H160-24SR3,2156-A2T26H160-24SR3
Standard Package 1
Win Source Part Number 1042115-A2T26H160-24SR3
Ultra Librarian 3D Model Ultra Librarian A2T26H160-24SR3 CAD Model

Description

The 1042115-A2T26H160-24SR3 is a dual LDMOS transistor, designed for use in RF applications such as transmitters and amplifiers. It has a voltage rating of 65V and a frequency of 2.58GHz.

  • Voltage Rating: 65V
  • Frequency: 2.58GHz
  • Power Output: 28W
  • Gain: 15.5dB
  • Package / Case: NI-780S-4L2L
  • Supplier Device Package: NI-780S-4L2L
  • Current Test: 350mA
  • Voltage Test: 28V
  • Alternative Part: A2T26H160-24SR3A2T26H160--24SR3

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1+ $216.4180 $216.4180
2+ $194.0299 $388.0598
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