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Same model may have multiple batches, images only for reference.
IXFX27N80Q Real Image
Same model may have multiple batches, images only for reference.

IXFX27N80Q

Part No IXFX27N80Q
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description HiPerFET Power MOSFETs Q-CLASS
Datasheet
IXFX27N80Q Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Series HiPerFET
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 800V
Current - Continuous Drain (Id) @ 25°C 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4.5V @ 4mA
Gate Charge (Qg) (Maximum) @ Vgs 170nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 7600pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 500W (Tc)
Rds On (Maximum) @ Id, Vgs 320 mOhm @ 500mA, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package PLUS247-3
Package TO-247-3
Win Source Part Number 1191148-IXFX27N80Q
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Family Name IXFX27N80Q
Introduction Date October 09, 2000
ECCN EAR99
Country of Origin Republic of Korea
Estimated EOL Date 2019
Ultra Librarian 3D Model Ultra Librarian IXFX27N80Q CAD Model

Description

The IXFX27N80Q is an N-Channel MOSFET from the HiPerFET series manufactured by IXYS.

  • Power Dissipation: 500W
  • Drain-Source Voltage: 800V
  • Package: TO-247-3
  • Rds On: 320 mOhm @ 500mA, 10V
  • Gate Charge: 170nC @ 10V
  • Input Capacitance: 7600pF @ 25V

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $63.2895 $63.2895
2+ $51.9298 $103.8596
3+ $50.3070 $150.9210
5+ $48.6842 $243.4210
6+ $47.0614 $282.3684
8+ $42.1930 $337.5440
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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