The Vishay Siliconix MOSFET (Metal Oxide) with N-Channel FET type is a high-performance power transistor.

• Drain to Source Voltage (Vdss): 60V
• Power Dissipation: 375W (Tc)
• Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Current-Continuous Drain (Id) @ 25°C: 120A (Tc)
• Gate Charge (Qg) (Maximum) @ Vgs: 330nC @ 10V
• Input Capacitance (Ciss) (Maximum) @ Vds: 14700pF @ 25V
• Rds On (Maximum) @ Id, Vgs: 3.5mOhm @ 29A, 10V
• Vgs(th) (Maximum) @ Id: 2.5V @ 250μA
• Operating Temperature: -55°C to 175°C