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G2R1000MT17D

Part No G2R1000MT17D
Manufacturer GeneSiC Semiconductor
Catalog FETs - Single
Description SIC MOSFET N-CH 4A TO247-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs
Mfr GeneSiC Semiconductor
Series G2R?
Packaging Tube
Part Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1700 V
Current - Continuous Drain (Id) @ 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 2A, 20V
Vgs(th) (Max) @ Id 5.5V @ 500μA
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 20 V
Vgs (Max) +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds 111 pF @ 1000 V
Power Dissipation (Max) 44W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
Base Product Number G2R1000
Ultra Librarian 3D Model Ultra Librarian G2R1000MT17D CAD Model

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $4.1857 $50.2284
30+ $3.4345 $103.0350
46+ $3.3271 $153.0466
63+ $3.2198 $202.8474
81+ $3.1125 $252.1125
108+ $2.7905 $301.3740
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 17,452 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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