The Vishay Siliconix SIR167DP-T1-GE3 is a P-channel MOSFET transistor that belongs to the TrenchFET Gen III series.

• Manufacturer: Vishay Siliconix
• Series: TrenchFET Gen III
• Channel Type: P-channel
• Package: Tape and Reel
• Standard Package Size: 3,000
• Mounting Type: SMD (SMT)
• Operating Temperature: -55°C to 150°C (TJ)
• Drain to Source Voltage (Vdss): 30V
• Continuous Drain Current (Id) @ 25°C: 60A (Tc)
• Power Dissipation (Max): 65.8W (Tc)
• Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 4380 pF @ 15 V