The SI4944DY-T1-E3 is a TrenchFET series N-channel MOSFET with dual channels.

• Drain Source Voltage: It has a drain source voltage of 30V and a continuous drain current of 9.3A @ 25°C.
• Rds On (Maximum): The device has a maximum Rds On of 9.5 mOhm @ 12.2A and 10V, and a gate charge of 21nC @ 4.5V.
• Package/Case: The package/case is 8-SOIC (0.154", 3.90mm Width), and the device has an operating temperature range of -55°C ~ 150°C (TJ).
• Status: The SI4944DY-T1-E3 is an obsolete (EOL) product manufactured by Vishay.
• Gate Type: It is a logic level gate FET type with a maximum gate-source threshold voltage of 3V @ 250μA.
• Input Capacitance: The input capacitance is not specified.
• Alternative Products: The device is an alternative to TSM4944DCS, TSM4944DCS RL, and DMN3015LSD-13.