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Same model may have multiple batches, images only for reference.
IRFIB7N50A Real Image
Same model may have multiple batches, images only for reference.

IRFIB7N50A

Part No IRFIB7N50A
Manufacturer Vishay
Catalog FETs - Single
Description Power MOSFET(Vdss=500V, Rds(on)max=0.52ohm, Id=6.6A) | MOSFET N-CH 500V 6.6A TO220FP
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 500V
Id - Continuous Drain Current 6.6A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 520mOhm at 4A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 52nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 1423pF at 25V
Power Dissipation (Maximum) 60W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220-3
Manufacturer Package TO-220-3 Full Pack, Isolated Tab
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1187689-IRFIB7N50A
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFIB7N50A CAD Model

Description

The Vishay Siliconix IRFIB7N50A is a MOSFET transistor designed for through-hole mounting.

  • Polarity: N-channel
  • Vds Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 6.6A
  • Maximum Rds On: 520mOhm @ 4A and 10V
  • Gate-Source Voltage(th): 4V @ 250μA
  • Gate Charge (Qg): 52nC @ 10V
  • Maximum Gate-Source Voltage: ±30V
  • Input Capacitance (Ciss): 1423pF @ 25Vds
  • Package: TO-220-3 Full Pack, Isolated Tab
  • Maximum Power Dissipation: 60W
  • Popularity: Medium
  • Supply and Demand: Limited

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