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Same model may have multiple batches, images only for reference.
IRFPG30 Real Image
Same model may have multiple batches, images only for reference.

IRFPG30

Part No IRFPG30
Manufacturer Vishay
Catalog FETs - Single
Description Power MOSFET(Vdss=1000V, Rds(on)=5.0ohm, Id=3.1A) | MOSFET N-CH 1000V 3.1A TO-247AC
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 1000V
Id - Continuous Drain Current 3.1A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 5Ohm at 1.9A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 80nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 980pF at 25V
Power Dissipation (Maximum) 125W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-247-3
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 500
MSL Level 1 (Unlimited)
Win Source Part Number 1187828-IRFPG30
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFPG30 CAD Model

Description

The Vishay Siliconix MOSFET is a N-Channel transistor with a drive voltage of 10V and a drain-source breakdown voltage of 1000V.

  • Channel Type: N-Channel
  • Drive Voltage: 10V
  • Drain-Source Breakdown Voltage: 1000V
  • Continuous Drain Current: 3.1A
  • Power Dissipation: 125W
  • FET Feature: Not Specified
  • Mounting Type: Through Hole
  • Package: TO-247-3
  • Gate-Source Voltage: ±20V
  • Input Capacitance: 980pF @ 25V
  • Product Status: Obsolete
  • Pack Quantity: 500

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