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UT3416L-AE3-R

Part No UT3416L-AE3-R
Manufacturer UTC
Catalog Electronic Wholesale
Description N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Sample
Rohs State rohs
ECAD Module
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Manufacturer UTC
Win Source Part Number 1278463-UT3416L-AE3-R
Manufacturer Homepage www.utc-ic.com
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian UT3416L-AE3-R CAD Model

Description

The UT3416L-AE3-R is an N-Channel enhancement mode MOSFET manufactured by UTC (Unisonic Technologies Co., Ltd.). It's designed for applications that require low on-resistance and fast switching, such as load switching, DC-DC conversion, and power management. The MOSFET aims to provide efficient and reliable performance in various electronic circuits.

Applications:

  • Load Switching: Efficiently controls power to various loads in electronic devices.
  • DC-DC Converters: Used as a switching element in DC-DC voltage regulation circuits.
  • Power Management: Integrated into power management systems for optimized energy usage.
  • Motor Control: Can be employed in low-voltage motor control applications.

Features:

  • N-Channel MOSFET: Common configuration for efficient switching.
  • Low On-Resistance (RDS(on)): Reduces conduction losses for improved efficiency.
  • Fast Switching Speed: Enables high-frequency operation in switching applications.
  • Surface Mount Package: Suitable for automated assembly and compact product designs.
  • Lead-Free Finish: Compliant with environmental regulations.

Benefits:

  • High Efficiency: Low on-resistance minimizes power dissipation, leading to increased efficiency.
  • Compact Design: Surface mount package allows for smaller and more compact designs.
  • Reduced Heat Generation: Lower power losses result in reduced heat generation, improving system reliability.
  • Fast Switching: Enables high-frequency operation for better performance in switching applications.
  • Simplified Design: N-Channel configuration makes design straightforward.

Additional Details:

Typical specifications for the UT3416L-AE3-R include a drain-source voltage (VDS) of 30V, a gate-source voltage (VGS) of ±20V, and a continuous drain current (ID) depending on operating conditions and package. The on-resistance (RDS(on)) is specified at various gate-source voltages. The package is typically a SOT-23. The ‘-AE3-R’ suffix most likely specifies the packaging (e.g., tape and reel) and other manufacturing details. The device conforms to RoHS standards, indicating it is lead-free and compliant with environmental regulations.

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