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4N65F

Part No 4N65F
Manufacturer UMW
Catalog FETs - Single
Description MOSFET N-CH 650V 4A TO220F
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Series *
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.7Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±30V
Power Dissipation (Max) 33W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220F-3
Package / Case TO-220-3 Full Pack
Ultra Librarian 3D Model Ultra Librarian 4N65F CAD Model

Description

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