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Same model may have multiple batches, images only for reference.
IRF3710SPBF Real Image
Same model may have multiple batches, images only for reference.

IRF3710SPBF

Part No IRF3710SPBF
Manufacturer Infineon Technologies
Catalog FETs - Single
Description HEXFET® Power MOSFET ( VDSS = 100V , RDS(on) = 23mΩ , ID = 57A ) | MOSFET N-CH 100V 57A D2PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 57A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 23mOhm at 28A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 130nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 3130pF at 25V
Power Dissipation (Maximum) 200W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1186991-IRF3710SPBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF3710SPBF CAD Model

Description

The Infineon Technologies IRF3710SPBF is a MOSFET transistor with N-channel polarity.

  • Channel Polarity: N-channel
  • Operating Temperature: -55°C to 175°C
  • Package: D2PAK
  • Power Dissipation: 200W
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 57A
  • Gate-Source Voltage: ±20V
  • Input Capacitance: 3130pF @ 25V
  • Drive Voltage: 10V
  • Maximum Rds on: 23mOhm @ 28A and 10V
  • Gate-Source Voltage Threshold: 4V @ 250μA
  • Gate Charge: 130nC @ 10V
  • Type: Discrete semiconductor product

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