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Same model may have multiple batches, images only for reference.
HAT2287WP-EL-E Real Image
Same model may have multiple batches, images only for reference.

HAT2287WP-EL-E

Part No HAT2287WP-EL-E
Manufacturer Renesas Electronics America
Catalog FETs - Single
Description Silicon N Channel Power MOS FET Power Switching | MOSFET N-CH WPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Tape and Reel
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 200V
Id - Continuous Drain Current 17A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 94mOhm at 8.5A, 10V
Gate Charge (Qg) (Maximum) at Vgs 26nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 1200pF at 25V
Power Dissipation (Maximum) 30W
Temperature Range - Operating 150°C
Mounting Style SMD
Supplier Device Package 8-WPAK
Manufacturer Package 8-PowerWDFN
Manufacturer Pack Quantity 2,500
MSL Level 1 (Unlimited)
Win Source Part Number 1178742-HAT2287WP-EL-E
Manufacturer Homepage www.renesas.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian HAT2287WP-EL-E CAD Model

Description

The Renesas HAT2287WP-EL-E is a MOSFET transistor with N-Channel polarity.

  • Vds - Drain-Source Breakdown Voltage: 200V
  • Id - Continuous Drain Current: 17A
  • Rds On (Maximum) @ Id, Vgs: 94mOhm @ 8.5A, 10V
  • Gate Charge (Qg) (Maximum) @ Vgs: 26nC @ 10V
  • Gate Source Voltage (Maximum): ±30V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 1200pF @ 25V
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Power Dissipation (Maximum): 30W
  • Package: 8-PowerWDFN
  • Supplier Device Package: 8-WPAK
  • Suitable for: discrete semiconductor products

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