The ON Semiconductor FQA10N80C is a high-performance, N-Channel QFET® MOSFET designed to deliver robust performance for a variety of applications. This power MOSFET features a drain-source voltage (V_DS) of 800V, which makes it suitable for high voltage applications that require efficient power conversion and switching.

Key Features

• High Drain-Source Voltage: With a V_DS of 800V, the FQA10N80C is capable of handling high voltage requirements, which is essential for industrial, power supply, and lighting applications.
• Low Gate Charge (Q_G): The device has been optimized for low gate charge, which reduces switching losses and improves overall efficiency in high-frequency switching applications.
• Low Crss (Reverse Transfer Capacitance): The minimized reverse transfer capacitance ensures lower feedback capacitance and faster switching capabilities.
• High Current Capability: This MOSFET can handle a continuous drain current (I_D) of 10A, making it suitable for high current applications.
• High Avalanche Energy Rating (E_AS): It is designed to withstand high energy pulses in the avalanche and commutation mode, which is critical for reliable operation under harsh conditions.

Applications

The FQA10N80C is ideal for a wide range of applications, including:

• Switch Mode Power Supplies (SMPS)
• Uninterruptible Power Supplies (UPS)
• Power Factor Correction (PFC) circuits
• Electronic Lamp Ballasts
• Induction Heating
• High Voltage DC-DC Converters

Quality and Reliability

ON Semiconductor is known for its commitment to quality and reliability, and the FQA10N80C is no exception. The device is RoHS compliant and is designed to meet the rigorous standards set by the industry, ensuring long-term reliability and performance in the field.

Summary

The FQA10N80C from ON Semiconductor is a robust, high-voltage, and high-performance N-Channel MOSFET that offers a blend of efficiency and reliability for a variety of power applications. With its high current capability, low gate charge, and high avalanche energy rating, this MOSFET is an excellent choice for designers looking to optimize their power management systems.