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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 60V
Id - Continuous Drain Current 1.7A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 200mOhm at 1A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 11nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 310pF at 25V
Power Dissipation (Maximum) 1.3W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package 4-DIP, Hexdip, HVMDIP
Manufacturer Package 4-DIP
Manufacturer Pack Quantity 2,500
MSL Level 1 (Unlimited)
Win Source Part Number 1187555-IRFD014
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian IRFD014 CAD Model

Description

The Vishay Siliconix MOSFET is a discrete semiconductor product that is used in industrial and power management applications.

  • Manufacturer: Vishay Siliconix
  • Channel Type: N-channel transistor
  • Drain-source breakdown voltage: 60V
  • Continuous drain current: 1.7A
  • Maximum Rds On: 200mOhm @ 1A and 10V
  • Gate-source voltage(th): 4V @ 250μA
  • Gate charge (Qg): 11nC @ 10V
  • Input capacitance (Ciss): 310pF @ 25V
  • Package: 4-DIP, Hexdip, HVMDIP package
  • Power dissipation: 1.3W
  • Drive voltage (Max Rds On, Min Rds On): 10V
  • Temperature range: -55°C to 175°C
  • Status: obsolete
  • Popularity: medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $8.8637 $53.1822
14+ $7.2728 $101.8192
22+ $7.0455 $155.0010
30+ $6.8182 $204.5460
38+ $6.5910 $250.4580
51+ $5.9091 $301.3641
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 2,500 pieces
MOQ: 6 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?
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