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ULN2803APG

Part No ULN2803APG
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays
Description TRANS 8NPN DARL 50V 0.5A 18DIP
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Obsolete(EOL)
Transistor Polarity 8 NPN Darlington
Maximum Current Collector 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Max Vce (sat) 1.6V @ 500μA, 350mA
Typical Gain (hFE) (Min) 1000 @ 350mA, 2V
Maximum Power Dissipation 1.47W
Temperature Range - Operating -40°C to 85°C (TA)
Mounting Through Hole
Case / Package 18-DIP
Win Source Part Number 093768-ULN2803APG
Family Name ULN2803AP
Introduction Date February 14, 2006
Estimated EOL Date Obsolete
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian ULN2803APG CAD Model

Description

The ULN2803APG is a NPN Darlington transistor array IC from Toshiba Semiconductor and Storage.

  • Product Type: Discrete semiconductor product
  • Package: 18-DIP
  • Mounting: Through-hole
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Collector Current: 500mA
  • Maximum Power Dissipation: 1.47W
  • Status: Obsolete
  • Popularity: High
  • Supply and Demand Status: Sufficient
  • Alternative Part: TBD62083APG

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.9061 $57.1830
65+ $1.5640 $101.6600
100+ $1.5151 $151.5100
140+ $1.4662 $205.2680
180+ $1.4173 $255.1140
240+ $1.2707 $304.9680
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 24,000 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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