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Same model may have multiple batches, images only for reference.
PBSS4130PANP,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PBSS4130PANP,115

Part No PBSS4130PANP,115
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Arrays
Description TRANS NPN/PNP 30V 1A 6HUSON
Datasheet
PBSS4130PANP,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity NPN, PNP
Maximum Current Collector 1A
VCEO Maximum Collector-Emitter Breakdown Voltage 30V
Max Vce (sat) 100mV @ 50mA, 500mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 210 @ 500mA, 2V
Maximum Power Dissipation 510mW
Frequency - Transition 165MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package DFN2020-6
Win Source Part Number 1086463-PBSS4130PANP,115
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PBSS4130PANP,115 CAD Model

Description

The Nexperia USA PBSS4130PANP,115 is an NPN/PNP transistor with a collector-emitter breakdown voltage of 30V and a maximum current collector of 1A.

  • Manufacturer: Nexperia USA
  • Type: NPN/PNP Transistor
  • Collector-Emitter Breakdown Voltage: 30V
  • Maximum Current Collector: 1A
  • Frequency Transition: 165MHz
  • Typical Gain: 210 @ 500mA and 2V
  • Maximum Power Dissipation: 510mW
  • Collector Cut-off Current: 100nA
  • Package: DFN2020-6
  • Operating Temperature: 150°C
  • Application: Discrete semiconductor products

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